Analysis of Population Inversion for Lasing Threshold in Semiconductors
- 1 April 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (4)
- https://doi.org/10.1143/jjap.7.409
Abstract
The rate of recombination due to spontaneous emission of light at lasing threshold is calculated for a direct band gap semiconductor. The recombination rate for doped semiconductor, where the donor state is assumed to be discrete, is numerically estimated in the temperature range from 50°K to 400°K and compared with the undoped case. It is shown that the threshold of excitation rate for lasing action is decreased by introducing donors (or acceptors) to a host semiconductor.Keywords
This publication has 8 references indexed in Scilit:
- Visible Electroluminescence from p-n Junctions in Cd1-xMgxTeJapanese Journal of Applied Physics, 1967
- Effect of Band Tails on Stimulated Emission of Light in SemiconductorsPhysical Review B, 1966
- ELECTRON-BEAM PUMPED LASERS OF CdSe AND CdSApplied Physics Letters, 1966
- Semiconductor lasersProceedings of the IEEE, 1966
- EFFICIENT VISIBLE INJECTION ELECTROLUMINESCENCE FROM p-n JUNCTIONS IN ZnSexTe1−xApplied Physics Letters, 1965
- EFFICIENT, VISIBLE ELECTROLUMINESCENCE FROM p-n JUNCTIONS IN ZnxCd1−xTeApplied Physics Letters, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952