The silicon cryosar at microwave frequencies
- 1 June 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (6) , 966-970
- https://doi.org/10.1109/T-ED.1979.19526
Abstract
Microwave and low-frequency measurements are reported onn^{+}-v-n^{+}silicon cryosars fabricated with narrow intrinsic region widths. The low-frequency measurements includeV-Idata with and without incident microwave power. The electric field required to cause impact ionization of the donors was found to be greater than 105V/m. The microwave measurements include a demonstration of mixing, harmonic mixing, and harmonic generation. Small-signal impedance measurements as a function of bias are reported at 1.33 and 3.05 GHz, and the diode noise temperature was measured to be 16 000 or 3000 K depending on bias polarity. Mobile electron lifetime is 10-10s.Keywords
This publication has 0 references indexed in Scilit: