Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (1) , 117-120
- https://doi.org/10.1109/t-ed.1981.20292
Abstract
A new device structure is proposed for Si MOSFET, featuring an insulated gate structure, channel doping, and finite spacing between gate and source and between gate and drain. Two-dimensional numerical analysis shows that punchthrough is suppressed and that minimum gate length, limited bypunchthrough or VTshift, is extended into the submicrometer range.Keywords
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