VLSI-compatible smart-pixel interface circuits and technology
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The optoelectronic VLSI (OE-VLSI) smart pixel receiver is very different from a classic telecommunications-grade receiver. In the OE-VLSI case, the receiver must be particularly compact, and dissipate a minimum amount of power, since large numbers of the circuits are presumed to exist on the chip. Noise immunity and dynamic range are also important parameters. Finally, the OE-VLSI receiver must generate a logic-voltage that is presumed to be utilized on the same chip.Keywords
This publication has 5 references indexed in Scilit:
- 1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOSIEEE Photonics Technology Letters, 1996
- 3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuitIEEE Photonics Technology Letters, 1995
- GaAs MQW modulators integrated with silicon CMOSIEEE Photonics Technology Letters, 1995
- Logic self-electrooptic effect devices: quantum-well optoelectronic multiport logic gates, multiplexers, demultiplexers, and shift registersIEEE Journal of Quantum Electronics, 1992
- A high-speed sensing scheme for 1T dynamic RAMs utilizing the clamped bit-line sense amplifierIEEE Journal of Solid-State Circuits, 1992