Impulse-doped GaAs power FETs for high efficiency operation
- 12 May 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (10) , 597-598
- https://doi.org/10.1049/el:19880405
Abstract
We have fabricated impulse-doped GaAs power FETs demonstrating 59% power-added efficiency with 10.4 dB associated gain and 0.33 W/mm at 10 GHz. To the best of our knowledge, this is the highest power-added efficiency ever reported at X-band for a GaAs FET.Keywords
This publication has 1 reference indexed in Scilit:
- A GaAs Microwave MESFET with Extremely Low DistortionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987