A large signal DC model for GaAs/Ga/sub 1-x/Al/sub x/As heterojunction bipolar transistors
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Effect of surface treatment on surface recombination velocity and diode leakage current in GaPJournal of Vacuum Science and Technology, 1976
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970