Fabrication of apertures, slots, and grooves at the 8–80 nm scale in silicon and metal films

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Abstract
Fabrication of apertures, slots, and grooves in silicon, gold–palladium, and lithium fluoride has been demonstrated using a 100 keV electron beam. For the LiF films we have been able to etch<2 nm wide by 50 nm deep grooves on 10 nm centers. Grooves in silicon 8 nm wide by 30 nm deep have been made by reactive ion etching in SF6. Apertures as small as 8 nm in diameter have been produced in AuPd films self-supported over larger holes in 60 nm thick Si windows.

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