End-Hall ion source

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Abstract
The end-Hall ion source has been developed for high-current, low-energy ion-beam applications. Beam currents up to 1 A have been obtained at mean ion energies of 30–120 eV, using Ar, Kr, or O2. The end-Hall source should be useful in applications where large currents of low-energy ions are used in conjunction with thin-film deposition to increase adhesion, modify stress, increase density or hardness, produce a preferred orientation, or improve step coverage. It should also be useful for reactive etching. It is suited for use in a production environment because it is simple, mechanically rugged, and reliable.

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