A Cr—Ag—Au metalization system

1 April 1969

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 16 (4) , 356-360
https://doi.org/10.1109/t-ed.1969.16757

Abstract

A comprehensive study of a Cr-Ag-Au metalization system, as well as a comparison with an aluminum system, is described. The Cr-Ag-Au metalization system, which can be deposited in a conventional evaporator with relatively little increase in processing complexity, has the desirable characteristics of aluminum metalization. It can be patterned more easily than equivalent thicknesses of aluminum. The Cr-Ag-Au has excellent storage characteristics at 300°C and has a much longer mean time to failure than does aluminum under high current density-high temperature stress. In addition, measurements show that with the use of an enhancement diffusion the Cr-Ag-Au produces as good as or better contact to p- and n-type silicon than does aluminum. Finally, the absence of significant metalization-oxide interaction makes Cr-Ag-Au useful for MOS devices and the ease with which contact is made between layers of this metalization indicates a number of applications for Cr-Ag-Au in multilayered devices.

Keywords

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