Gallium incorporation kinetics during gas source molecular beam epitaxy growth of GaN
- 28 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2) , 339-343
- https://doi.org/10.1016/s0038-1101(96)00241-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Growth of GaN(0001)1×1 on Al2O3(0001) by gas-source molecular beam epitaxyApplied Physics Letters, 1992
- Cation incorporation rate limitations in molecular-beam epitaxy: Effects of strain and surface compositionJournal of Vacuum Science & Technology B, 1989