Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4) , 2171-2176
- https://doi.org/10.1116/1.590302
Abstract
No abstract availableKeywords
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