Electrical and Optical Properties of CuInS2 Grown by the Sintering Method
- 1 April 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (4R) , 650
- https://doi.org/10.1143/jjap.29.650
Abstract
Electrical and optical properties as well as achieved density are studied for highly densified and oriented CuInS2 crystal-like tablets prepared by the sintering method. The stoichiometric single-crystal fragment grown at 1050°C is found to have the best electrical quality with resistivity of 50 Ωcm. Deviation from stoichiometry results in p-type and n-type conduction for Cu2S-rich and In2S3-rich crystals, respectively.Keywords
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