Transient behaviour of laser generated carrier mobility in n-Ge
- 16 May 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 11 (1) , K85-K87
- https://doi.org/10.1002/pssa.2210110160
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Mobility Kinetics in CdSe Single CrystalsPhysica Status Solidi (a), 1970
- Recombination of laser excited electrons and holes in Ge and SiPhysica Status Solidi (b), 1970
- The High Current Limit for Semiconductor Junction DevicesProceedings of the IRE, 1957