Gallium nitride solid state ultraviolet detectors
- 15 November 1993
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1952, 14-22
- https://doi.org/10.1117/12.161404
Abstract
This paper describes a series of new solid state ultraviolet detectors based on gallium nitride (GaN) material. Data will be presented on photoconductive type devices. These devices have a high responsivity between 200 to 362 nm with a sharp long wavelength cutoff at 362 nm. The photoconductive detectors have measured gains of over twenty thousand with proper doping. Data is given on two different detector configurations. Devices will be shown that can be utilized in the development of a focal plane array for UV imaging.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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