Photo Alignment Materials with High Sensitivity to Near UV Light.

Abstract
We developed new photo alignment materials based on chalconyl structure with high sensitivity to near UV light. Poly(4-methacryloyloxy chalcone), PM4Ch, and its derivatives exhibited good LC alignment upon near UV exposure. The photoreactivity of chalconyl structure was high because due to longer wavelength of UV absorption. The high sensitivity of PM4Ch, compared with Poly(4′-methacryloyloxy chalcone), PMCh, could be explained by the suppression of isomerization and/or by the alignment capability of the side chain structure.

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