Thin films of CuInSe2produced by a solid state reaction from stacked elemental layers
- 1 November 1988
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (11) , 1143-1144
- https://doi.org/10.1088/0268-1242/3/11/013
Abstract
Thin films of CuInSe2 have been prepared from elemental stacked structures by annealing in vacuum. X-ray powder diffractometry and reflection electron diffraction show the films to be polycrystalline, possessing the characteristic chalcopyrite structure. Optical measurements indicate a direct gap material with Eg=1.01 eV. Both n- and p-type films have been prepared with resistivities in the range 1 to 104 Omega cm. The potential application of this new preparation technique to large area solar cells is discussed.Keywords
This publication has 3 references indexed in Scilit:
- Comment on: Preparation and characterization of chemically deposited CuInS2 thin filmsSolar Energy Materials, 1987
- Laser-induced synthesis of thin CuInSe2 filmsSolar Cells, 1986
- The optical properties of CuInSe2 thin filmsThin Solid Films, 1978