RF biasing through capacitive collector to target coupling in RF diode sputtering

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Abstract
An RF sputtering system which is suitable for deposition of both conductive and nonconductive thin films by bias sputtering is described. The substrate bias is obtained by capacitive collector to target coupling, the capacitance of the collector dark space and an external capacitor being used for voltage division. The influence of target voltage and sputtering pressure on bias generation is considered. When using RF discharge no electrode is in direct electric contact with the plasma, and a systematic error is introduced by measuring the bias voltage as collector DC voltage relative to the target's earthed counter electrode, which error is discussed. Data are presented on the temperature coefficient of resistance in bias-sputtered nickel films showing similar dependence on target voltage and on bias voltage.

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