The Temperature Dependence of the Etch Rates of GaAs , AlGaAs , InP , and Masking Materials in a Boron Trichloride:Chlorine Plasma

Publisher Website
Google Scholar
Abstract
The pressure, temperature, and power effects are examined independently of each other for , , and in a boron trichloride:chlorine plasma. Conditions are examined for which chemical etching and for which sputter‐assisted etching occur. The variation of etch rate with change in temperature are discussed. For fixed temperatures the etch rates actually decrease with increased power in the low pressure regime. For the etch rates increase with increasing power at fixed temperatures.

This publication has 0 references indexed in Scilit: