Screening of long-wavelength laser at high temperature and high current levels

10 November 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (23) , 976-977
https://doi.org/10.1049/el:19830663

Abstract

It is found that electroluminescent mode aging at high-temperature and high-current levels is useful for selecting long-lived InGaAsP 1.3 μm lasers. Lasers selected by this screening have little change in threshold current or forward voltage through the aging test at an elevated temperature with constant light-output power.

Keywords

FORWARD VOLTAGE
SCREENING
HIGH TEMPERATURE
CONSTANT LIGHT-OUTPUT POWER
INGAASP
ELECTROLUMINESCENT MODE AGING
1.3 MICRON
SEMICONDUCTOR JUNCTION LASERS
III-V SEMICONDUCTORS
AGING TEST
THRESHOLD CURRENT
HIGH-CURRENT LEVELS

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