Drift–diffusion versus energy model for millimetre‐wave impatt diodes modelling
- 1 June 1989
- journal article
- Published by Wiley in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- Vol. 2 (2) , 61-73
- https://doi.org/10.1002/jnm.1660020202
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Flat doping profile double-drift silicon IMPATT for reliable CW high-power high-efficiency generation in the 94-GHz windowIEEE Transactions on Electron Devices, 1990
- Heuristic network partitioning algorithm using the concept of loop indexIEE Proceedings G (Electronic Circuits and Systems), 1984
- Impact ionization of electrons in silicon (steady state)Journal of Applied Physics, 1983
- AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICESCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1982
- Terotechnology. A modern approach to plant engineeringIEE Proceedings A Physical Science, Measurement and Instrumentation, Management and Education, Reviews, 1982
- Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistorsElectronics Letters, 1976
- Two-dimensional particle models in semiconductor-device analysisElectronics Letters, 1974
- Semiconductor Device SimulationIEEE Transactions on Microwave Theory and Techniques, 1974
- Electron and hole ionization rates in epitaxial silicon at high electric fieldsSolid-State Electronics, 1973
- An accurate numerical one-dimensional solution of the p-n junction under arbitrary transient conditionsSolid-State Electronics, 1968