Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source
- 1 March 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (2) , 733-735
- https://doi.org/10.1116/1.588149