Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films
- 4 September 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (10) , 1431-1433
- https://doi.org/10.1063/1.1290494
Abstract
Ta 2 O 5 films deposited on Si substrates were investigated using transmission Fourier-transform infrared spectroscopy. We found a new absorption peak at 2340 cm −1 that can be characterized as a stretching vibration mode due to Ta=O bonds in the films. This peak appeared following annealing in O 2 ambient, but not in N 2 ambient. It was located at 2335 cm −1 in amorphous Ta 2 O 5 films and shifted to 2340 cm −1 after crystallization by annealing at over 700 °C. The bonds associated with the peak were homogeneously distributed in the film. We demonstrated that Ta 2 O 5 films can include strong double bonds between Ta and O ( Ta=O ) in the structure, independent of whether they are crystalline or amorphous.Keywords
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