Effects of water partial pressure on the activated electron beam evaporation process to deposit tin-doped indium-oxide films

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Abstract
The effects of water partial pressure (PH2O) during deposition on the structural and electrical properties of tin-doped indium-oxide (ITO) films have been investigated on an activated electron beam evaporation process using an arc plasma generator. The resistivity of the films deposited at 180 °C increased with an increase in PH2O in terms of a decrease both in Hall mobility and carrier density. X-ray diffraction and scanning electron microscope analyses showed that the ITO films deposited at higher PH2O consisted of a major portion of larger crystalline grains with smaller internal strain and a small portion of amorphous regions which is supposed to be at the interface between the film and the substrate. Plasma diagnostics by optical emission spectroscopy revealed that atomic hydrogen was generated by electron-impact dissociation of H2O and that the activation of Ar or O2 was suppressed in the higher PH2O process, which resulted in the deposition of less oxidized and lower-damaged ITO films.

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