Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x-ray photoelectron spectroscopy
- 6 November 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (19) , 2792-2794
- https://doi.org/10.1063/1.114595
Abstract
The valence band offsets at the heterointerfaces of the CdF2/CaF2/Si(111) structure grown by molecular beam epitaxy were evaluated using x‐ray photoelectron spectroscopy, and the energy band diagram of this heterostructure was proposed. It was found that the interface of CdF2/CaF2 has large conduction band offset: 2.9 eV, and the energy level of CdF2 conduction band edge is below that of Si.Keywords
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