Radiation Effects Characterization of the SBP9900A 16-Bit Microprocessor

1 January 1979

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 26 (6) , 4735-4739
https://doi.org/10.1109/TNS.1979.4330219

Abstract

Characterization of the Texas Instruments SBP9900A 16-bit microprocessor has been performed in radiation environments. The test results indicate that the devices will remain functional at reduced electrical performance following exposures to ionizing radiation levels of 3×106rads(Si) or neutron fluences of 3×1013n/cm2. Transient logic upset was not observed at ionizing radiation dose rates of less than 1×109rads(Si)/sec. The primary failure mode in the neutron and total ionizing dose environments was found to be a reduction in up-gain of the npn portion of the I2L cell. Methods of enhancing the radiation hardness of the SBP9900A are discussed.

Keywords

RADIATION EFFECTS
MICROPROCESSORS
LOGIC TESTING
NEUTRONS
READ ONLY MEMORY
INSTRUMENTS
LOGIC DEVICES
IONIZING RADIATION
MANUFACTURING
LOGIC FUNCTIONS