Simulation of oxygen vacancies at the Si–SiO2 interface
- 1 December 1995
- journal article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 134 (1-4) , 179-183
- https://doi.org/10.1080/10420159508227209
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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