TRANSIENT DOUBLE INJECTION IN GERMANIUM
- 1 September 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (5) , 164-166
- https://doi.org/10.1063/1.1652554
Abstract
Some new features of the step‐voltage transient behavior of an electron‐hole plasma injected via contacts into a long bar of p‐type germanium are observed and explained theoretically. When the leading edge of the propagating plasma reaches the anode there is a cusp in the time derivative of the current, and thereafter the current increases with time essentially as constant x[1 ‐ exp (−t/τ)], where τ is the recombination time.Keywords
This publication has 7 references indexed in Scilit:
- Some Plasma Effects in SemiconductorsIEEE Transactions on Nuclear Science, 1967
- Transient Response of Double Injection in a Semiconductor of Finite Cross SectionJournal of Applied Physics, 1966
- Theory of Transient Space-Charge-Limited Currents in Solids in the Presence of TrappingPhysical Review B, 1962
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Theory of Transient Phenomena in the Transport of Holes in an Excess SemiconductorBell System Technical Journal, 1949
- Hole Injection in Germanium-Quantitative Studies and Filamentary Transistors*Bell System Technical Journal, 1949