The temperature dependence of vibronic spectra in irradiated silicon
- 12 June 1972
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 5 (11) , 1265-1276
- https://doi.org/10.1088/0022-3719/5/11/021
Abstract
Crucible grown and high purity floating zone silicon specimens have been irradiated at room temperature with gamma rays. High resolution cathodoluminescence spectra of the vibronic bands with zero phonon lines at 0.717, 0.724, 0.790, 0.795, 0.898 and 0.969 eV are given. The widths and energies of these lines, and the intensities of the 0.790, 0.795 and 0.969 eV lines relative to the total intensities of their associated bands, are given in the temperature range 25 to 75 K. These data are discussed in terms of the theory of linear and quadratic electron-phonon coupling in the adiabatic approximation, using Debye spectra of coupled phonons and, for the 0.790, 0.795 and 0.969 eV lines, densities of coupled phonons derived from the emission band shapes. The theory gives a selfconsistency between the spectral band shapes and the widths and energies of the zero phonon lines, but does not satisfactorily fit the temperature dependence of the intensities of the zero phonon lines. It is not known whether the failure of the theory is due to a Jahn-Teller effect (no absorption at the centres has been detected), or to the coupling by the electron-phonon interaction of electronic states whose energies are not greatly separated compared with the phonon energies involved.Keywords
This publication has 13 references indexed in Scilit:
- Vibronic properties of the F+absorption band in calcium oxideJournal of Physics C: Solid State Physics, 1971
- Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations†Radiation Effects, 1971
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiated-Type SiliconPhysical Review B, 1966
- The thermodynamic and optical properties of germanium, silicon, diamond and gallium arsenideProceedings of the Physical Society, 1966
- Shapes of Impurity Absorption Bands in SolidsPhysical Review B, 1965
- Temperature Dependence of the Width and Position of theFluorescence Lines ofandin MgOPhysical Review B, 1964
- Two-Phonon Indirect Transitions and Lattice Scattering in SiPhysical Review B, 1960
- Studies of the Jahn-Teller effect .II. The dynamical problemProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958
- The Atomic Heat of Silicon below 100°KPhysical Review B, 1952