Quantum confinement and charge control in deep mesa etched quantum wire devices
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (1) , 7-9
- https://doi.org/10.1109/55.215083
Abstract
Novel aspects of charge confinement in quantum wires are investigated with a self-consistent Schrodinger-Poisson model in the high-temperature regime. A decreasing eigenenergy separation with gate bias is revealed which differs from the behavior observed in 2-D devices. In addition, charge control is examined and an analytical approximation relating charge density to gate bias is obtained.Keywords
This publication has 9 references indexed in Scilit:
- Solution of the Schrödinger equation by a spectral methodPublished by Elsevier ,2004
- Stark ladders in strongly coupled GaAs-AlAs superlatticesApplied Physics Letters, 1991
- Intersubband resonant effects of dissipative transport in quantum wiresPhysical Review B, 1990
- One-dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wiresApplied Physics Letters, 1989
- Quantum transport in an electron-wave guidePhysical Review Letters, 1987
- Electron states in narrow gate-induced channels in SiApplied Physics Letters, 1986
- Fabrication of sub-100-nm linewidth periodic structures for study of quantum effects from interference and confinement in Si inversion layersJournal of Vacuum Science & Technology B, 1986
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972