Zinc-oxide–on–silicon surface acoustic wave resonators
- 15 October 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8) , 700-701
- https://doi.org/10.1063/1.92045
Abstract
The first surface acoustic wave resonators fabricated using a ZnO‐on‐Si layered structure are described and characterized. The optimum location of the transducers in the resonant cavity and the general performance are first cited for devices containing isoloated aluminum, isolated Cr/Au, and shorted Cr/Au reflector strips. The transmission characteristics and reflecting properties of the shorted Cr/Au configuration are then examined in more detail. An unloaded Q of 3100 has been obtained with the shorted Cr/Au configuration at a resonant frequency of 105.4 MHz.Keywords
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