Ion-implanted low-barrier PtSi Schottky-barrier diodes
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (2) , 420-425
- https://doi.org/10.1109/T-ED.1980.19878
Abstract
An ion-implanted, shallow n+layer has been used for lowering the barrier height of PtSi-n-Si Schottky diodes. Barrier height reductions up to 200 mV have been achieved with little degradation of the diode's reverse-current characteristics. During silicide formation, the implanted ions are "pushed" ahead of the PtSi-Si reaction zone and pile up at the silicide-silicon interface, resulting in more barrier lowering than would be expected from the ion-implant dose. A model including the impurity pileup is presented and calculations based on the model are shown to be in reasonable agreement with experimental measurements.Keywords
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