Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells
- 21 February 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (8) , 986-987
- https://doi.org/10.1063/1.111960
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopyJournal of Applied Physics, 1992
- Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wellsApplied Physics Letters, 1990