Spectroscopic evidence for the hydrogen passivation of zinc acceptors in gallium arsenide
- 1 May 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (5) , 305-307
- https://doi.org/10.1088/0268-1242/2/5/010
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986
- Hydrogen localization near boron in siliconApplied Physics Letters, 1985
- Acceptor levels in gallium arsenide (luminescence measurements)Journal of Physics C: Solid State Physics, 1973
- Infra-red absorption due to localized modes of vibration of impurity complexes in ionic and semiconductor crystalsAdvances in Physics, 1969