Improvement of Grain-Boundary Conductivity of 8 mol % Yttria-Stabilized Zirconia by Precursor Scavenging of Siliceous Phase

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Abstract
A new method of scavenging highly resistive siliceous phase using two‐stage sintering, named as “precursor scavenging,” is suggested for improving the grain‐boundary conductivity of 8 mol % yttria‐stabilized zirconia (YSZ). The scavenging efficiency and mechanism were studied and compared with those of composites prepared by various methods using impedance spectroscopy and imaging secondary‐ion mass spectroscopy. A heat‐treatment at 1200°C for longer than 20 h before sintering increased grain‐boundary conductivity remarkably. The forming of inclusions containing Si was considered to be the origin of scavenging. The grain‐interior resistivity was not changed by precursor scavenging, while it increased more than 15% by adding 1 mol % when sintered at 1600°C. Precursor scavenging, therefore, is a potential and promising way for improving the grain boundary conductivity without deteriorating the grain‐interior one. © 2000 The Electrochemical Society. All rights reserved.

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