Photodetecting Properties of CuInSe2 Homojunctions

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Abstract
We studied the photovoltaic properties of homojunctions prepared by indium diffusion on p-type CuInSe2 at liquid nitrogen and room temperatures. The CuInSe2 was grown by the Bridgman method. We obtained the photovolatic spectra for both parallel and perpendicular incident lights with respect to the plane of the junciton (both on the p and n sides). The wavelength range was between 1.4 µm and 0.8 µm. We calculated a quantum efficiency of 40% at room temperature. This efficiency remained approximately constant between 1.2 µm and 0.9 µm. We have also measured response times for the junction at 300K. For change of incident light the response time is 1.2×10-6 sec and for change of bias the response time is 4×10-7 sec.

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