Surface Barrier Junctions on Semiconducting Ferroelectrics

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Abstract
Data are presented for semiconducting BaTiO3 and KTN which show that measurements obtained from surface barrier junctions formed on semiconducting ferroelectrics can be used to study transition temperatures and nonlinear dielectric behavior of these materials. An analysis is given which relates in a simple way the dielectric properties as described by the Devonshire thermodynamic formalism to the results of measurements on surface barrier junctions. Values of the Devonshire coefficients so obtained differ from those obtained in bulk insulating KTN, presumably because of clamping effects.