Stability of nitrided silicon dioxide deposited by reactive sputtering

• 30 October 1995
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 67  (18) , 2693-2695
• https://doi.org/10.1063/1.114295

Abstract

Keywords

• INTERFACE STATES
• IV CHARACTERISTIC
• LEAKAGE CURRENT
• MOS JUNCTIONS
• NITRIDATION
• NITROGEN ADDITIONS
• SILICON OXIDES
• SPUTTERING