Bright dc electroluminescence in ZnSe-ZnS:Mn thin films
- 1 August 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4555-4557
- https://doi.org/10.1063/1.328285
Abstract
A dc‐operated thin‐film electroluminescent cell with the threshold voltage of ∼53 V has been developed in the system of ITO‐(ZnSe→ZnS:Mn)‐Al. The emissive layer of the cell is made of compound which varies from ZnSe to ZnS:Mn in composition. The brightnesses of up to 241 and 48.3 fL have been measured in the injection level of 50 mA/cm2 and 4.45 mA/cm2, respectively, at power efficiencies in the range 1.12×10−4–2.58×10−4 W/W.This publication has 6 references indexed in Scilit:
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