10 Gbit/s transmitter based on directly modulated InGaAlAs laser operating up to 126°C
- 13 November 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (23) , 1653-1654
- https://doi.org/10.1049/el:20031062
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Ultrahigh temperature and ultrahigh speed operationof1.3 µm strain-compensated AlGaInAs/InP uncooled laser diodesElectronics Letters, 1995
- High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applicationsIEEE Journal of Quantum Electronics, 1994