Electron-relaxation effects in transferred-electron devices revealed by new simulation method
- 13 July 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 8 (14) , 363-364
- https://doi.org/10.1049/el:19720265
Abstract
A simulation method which efficiently solves the complete Boltzmann transport equation has been used to analyse transferred-electron oscillators. Four hitherto unrecognised relaxation effects have been identified, which are of major significance in characterising modes of operation.Keywords
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