Oxide field and thickness dependence of trap generation in 9–30 nm dry and dry/wet/dry oxides

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Abstract
The oxide electric field and thickness dependencies of the oxide electron trap generation rate measured on 86–315 Å thick 900 °C dry oxide and 850 °C dry/wet/dry oxide stressed by substrate electron injection at average dc oxide fields of 1–9 MV/cm are reported. A minimum in the steady‐state gate voltage shift versus oxide electric field is discovered which suggests a balance of the field‐dependent electron trap charging and discharging rates with the generation rate of oxide traps by oxide field‐accelerated hot electrons. The thickness and field dependencies of trap charging, discharging, and generation are compared for two industrial oxidation processes, 900 °C dry and 850 °C dry/wet/dry oxides, and are shown to have similar trap generation rates. A new two‐trap generation‐charging‐discharging model is proposed and shown to give excellent agreement with the experimental data.