InP MIS transistors with grown-in sulphur dielectric
- 23 June 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (13) , 459-461
- https://doi.org/10.1049/el:19830313
Abstract
We report the first experimental results on accumulation layer InP MISFETs where the gate dielectric is grown into the substrate by chemical reaction with sulphur. These MIS structures have very little hysteresis and very high transistor transconductances.Keywords
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