Simulation Calculation on Energetics and Reconstruction Patterns for the GaAs(100) Surface
- 1 January 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 157 (1) , K23-K28
- https://doi.org/10.1002/pssb.2221570153
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The effect of reconstruction on rheed intensities for the GaAs(001)2 × 4 surfaceSurface Science, 1988
- Simulation of GaAs cluster formation on GaAs(001̄), AlAs(001̄), Si(001), and As1/Si(001) surfacesJournal of Vacuum Science & Technology B, 1988
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- Surface Stress Tensor Mediation of the Ledge Nucleation/Growth Process with the Surface Reconstruction Process in GaAsMRS Proceedings, 1987
- On the relation between composition, structure, topography and ionization energy of GaAs(001) surfacesSurface Science, 1985
- Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAsPhysical Review Letters, 1984
- Effect of arsenic species (As2 OR As4) on the crystallograpffic and electronic structure of mbe-grown GaAs(001) reconstructed surfacesSurface Science, 1983
- Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxyPhysical Review B, 1983
- Disorder on GaAs(001) surfaces prepared by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculationsPhysical Review B, 1982