Atomic scale imaging of the structure and chemistry of semiconductor interfaces by Z-contrast stem

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Abstract
A new technique for high-resolution electron microscopy is described together with a number of applications involving semiconductor interfaces. Optically, this technique represents the realization of incoherent imaging at atomic resolution, with the advantages over conventional coherent imaging methods of improved resolution and an unambiguous, simply interpretable image. In addition, the image shows strong compositional sensitivity, thus providing a direct map of a material's structure and chemistry on the atomic scale.

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