High-power GaAs f.e.t. prepared by molecular-beam epitaxy
- 23 November 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (24) , 759-761
- https://doi.org/10.1049/el:19780514
Abstract
High-power GaAs field-effect transistors were fabricated on molecular-beam epitaxial GaAs crystals. Devices with a power output at 1 dB gain compression of 4.0 W, a corresponding linear gain of 5.4 dB and a power-added efficiency as high as 35% have been realised.Keywords
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