Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12R) , 5586-5590
- https://doi.org/10.1143/jjap.32.5586
Abstract
We have studied the lateral transport of excitons in a GaAs/AlGaAs single quantum well by the exciton time-of-flight technique. The lateral motion of excitons has been measured as a function of temperature (4 K to 40 K) and excitation density (≥108 cm-2). Our analysis shows that the exciton diffusivity at temperatures below 10 K becomes considerably enhanced, implying extremely long (several micrometers) exciton mean free paths. This behavior is discussed in terms of several scattering mechanisms including interaction with non-equilibrium phonons emitted during energy relaxation of carriers.Keywords
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