Experimental study of anisotropy mechanisms during reactive ion etching of silicon in a SF6/C2Cl3F3 plasma
- 31 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 361-364
- https://doi.org/10.1016/0167-9317(94)90173-2
Abstract
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