Wet etching of GaN grown by molecular beam epitaxy on Si(111)
- 21 September 2000
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 15 (10) , 996-1000
- https://doi.org/10.1088/0268-1242/15/10/312
Abstract
A wet etching method for GaN and AlxGa1-xN, based on aqueous solutions of KOH, is presented. A detailed analysis of the etching rate dependence with temperature and concentration is described. This etching has been used for the fabrication of high optical quality pyramidal nanostructures in wurtzite N-face GaN grown on AlN-buffered Si(111) substrates by molecular beam epitaxy. These nanostructures have been studied by high-resolution transmission and scanning electron microscopy and their optical quality has been analysed by low-temperature photoluminescence (PL) measurements. The pyramids are parallel to the basal plane and limited by {111} planes and its presence improves the overall PL response of the sample. The relationship between the polarity of GaN and the characteristics of the AlN buffer has also been analysed.Keywords
This publication has 21 references indexed in Scilit:
- High visible rejection AlGaN photodetectors on Si(111) substratesApplied Physics Letters, 2000
- High electron mobility AlGaN/GaN heterostructure on (111) SiApplied Physics Letters, 2000
- Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxyApplied Physics Letters, 1999
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Crystallographic wet chemical etching of GaNApplied Physics Letters, 1998
- Ultraviolet and violet GaN light emitting diodes on siliconApplied Physics Letters, 1998
- The Polarity of GaN: a Critical ReviewMRS Internet Journal of Nitride Semiconductor Research, 1998
- Polarity of (00.1) GaN epilayers grown on a (00.1) sapphireApplied Physics Letters, 1997
- Room-temperature photoenhanced wet etching of GaNApplied Physics Letters, 1996
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995