Mechanism of Diffusion of Copper in Germanium
- 1 November 1956
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 104 (3) , 617-618
- https://doi.org/10.1103/physrev.104.617
Abstract
To explain the rapid diffusivity of copper in germanium and its dependence on structure, it is proposed that the copper be dissolved in two states, interstitial and substitutional. It is deduced that in the interstitial state the solubility of copper is about times less and the diffusivity many orders of magnitude greater than in the substitutional state. Conversion from the interstitial to the substitutional state is effected by lattice vacancies which are generated at free surfaces and dislocations; this accounts for the structure dependence of the diffusivity observed by Tweet and Gallagher.
Keywords
This publication has 6 references indexed in Scilit:
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Structure Sensitivity of Cu Diffusion in GePhysical Review B, 1956
- On the Behavior of Rapidly Diffusing Acceptors in GermaniumJournal of the Electrochemical Society, 1955
- Diffusivity and Solubility of Copper in GermaniumPhysical Review B, 1954
- Self-Diffusion in GermaniumPhysical Review B, 1954
- Mobility of Impurity Ions in Germanium and SiliconPhysical Review B, 1953