Anomalous behavior of the electron density of states in strongly disordered amorphous composite indium plus indium-oxide films
- 6 November 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (19) , 2132-2135
- https://doi.org/10.1103/physrevlett.63.2132
Abstract
Tunneling measurements on 3D amorphous composite indium plus indium-oxide films reveal anomalous features in the normal-state electron density of states (E). Above 2 meV, (E) increases linearly with ln(E) as expected for 2D films, rather than √E as expected for 3D films. However, the magnitude of the ln(E) term scales with resistivity , not sheet resistance .
Keywords
This publication has 20 references indexed in Scilit:
- Microstructure, dimensionality, and depression of the transition temperature in disordered superconducting filmsPhysical Review Letters, 1987
- Correction to the two-dimensional density of statesPhysical Review B, 1985
- Tunneling and Transport Measurements at the Metal-Insulator Transition of Amorphous Nb: SiPhysical Review Letters, 1983
- Structural phase transitions of indium/indium oxide thin-film compositesApplied Physics Letters, 1982
- Density-of-States Anomalies in a Disordered Conductor: A Tunneling StudyPhysical Review Letters, 1982
- Structural aspects of tunnel-junction coupled granular lead filmsJournal of Vacuum Science and Technology, 1981
- Electron Tunneling Experiments on AmorphousPhysical Review Letters, 1981
- Metal-Insulator Transition in Granular AluminumPhysical Review Letters, 1981
- Interaction Effects in Disordered Fermi Systems in Two DimensionsPhysical Review Letters, 1980
- Zero bias anomaly in tunnel resistance and electron-electron interactionSolid State Communications, 1979